http://www.futureelectronics.com/en/Search.aspx?dsNav=Ny:True,Nea:True,N:744 . FRAM, F-RAM, or ferroelectric random access memory, is a type of non volatile memory which uses ferroelectric film as a capacitor to store data, contrary to DRAM, which uses a dielectric layer to achieve non volatility. FRAM possesses characteristics of ROM and RAM memory and has the ability of low power consumption. http://youtu.be/VDbc8dipOqg